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Multi-Gigahertz Nyquist Analog-To-Digital Converters: Architecture and Circuit Innovations in Deep-Scaled CMOS and Finfet Technologies (2023)

Contributor(s): Ramkaj, Athanasios T (Author), Pelgrom, Marcel J M (Author), Steyaert, Michiel S J (Author), Tavernier, Filip (Author)

ISBN: 9783031227110

Publisher: Springer

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Pub Date: January 14, 2024

Lexile Code: 0000

Features: Illustrated

Target Age Group: NA to NA

Physical Info: 0.62" H x 9.21" L x 6.14" W ( 0.92 lbs) 269 pages

Series: Analog Circuits and Signal Processing

Descriptions, Reviews, etc.

Description:

This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed/power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter' building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy - speed - power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy - speed - power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies.

The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies.

  • Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification;
  • Describes novel methods and techniques to push the accuracy - speed - power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits' trade-offs across the entire ADC chain;
  • Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies;
  • Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.

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